| PART |
Description |
Maker |
| M5M4V64S30ATP-8A M5M4V64S30ATP-8L |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| M5M4V64S30ATP-12 M5M4V64S30ATP-8 M64S30A1 |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| M5M4V64S20ATP-12 M5M4V64S20ATP-8 |
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| HM5216808CSERIES 5216808C |
1,048,576-word ′ 8-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
2,097,152-word ′ 4-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
From old datasheet system
|
hitachi
|
| 5216165 |
1,048,576-word ′ 8-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
2,097,152-word ′ 4-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
From old datasheet system
|
hitachi
|
| D4564841G5 UPD4564441 UPD4564163 UPD4564841 |
64M-bit Synchronous DRAM 4-bank, LVTTL
|
Elpida Memory, Inc.
|
| K8D6316UBM-LC09 K8D638UBM-FC09 K8D6316UBM-LC08 K8D |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
http://
|
| K8D6316UBM-LC09 K8D6316UBM-LI09 K8D6316UBM-PI07 K8 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K8D6316UBM |
(K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
Samsung semiconductor
|
| M5M27C202JK-10 M5M27C202JK-12 M5M27C202JK-15 M5M27 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M5V208AKV M5M5V208AKV-55HI M5M5V208AKV-70HI |
Memory>Low Power SRAM
2097152-BIT(262144-WORD BY 8-BIT)CMOS STATIC RAM
|
Renesas Electronics Corporation
|
